SKU:63360986943
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" + 0. 5 mm in diameter x 0. 5 mm + 0. 05 mm th Orientation: (100) + 1o Polish: one
869 J·mol
shipped in a vacuum bag
working temperature 1750 oC Warning Please don't use alumina tube under vacuum at temperature > 1500 oC when vertically-mounted and >1400 oC when horizontally-mounted
Typical Application: Chemical processing & gas exploration
Such professional-grade diamond blades last longer and cut faster than ordinary notched-rim or plated-diamond blades
037Å @tooling = 100%
BCGDL1400S is a carbon gas diffusion layer (GDL) coated on a microporous cloth
it's a standard test battery for 8 Channel Battery Analyzer - BST8-5V40A-RT
Material: Polycarbonate/ Acrylonitrile Butadiene Styrene
Inductively Coupled Plasma
0 um +/- 10%
15±15% Pa-1
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