SKU:31172393759
Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Polycrystal Cr ( Chromium ) metallic substrate
Full sintered diamond blade: 4" x 0
Purity: 99
This electrode sheet is based on Aluminum foil coated by lithium-cobalt dioxide in double sides and is used as the cathode of Li-Ion battery -- 5 sheets /bag
and the latest version of controller software is installed and the analyzer is calibrated for immediate use
Standard Package
Speed Control for the blower is available at extra cost
Hygroscopicity: No Cleavage (101)
Purity Material Basis 99% Description White powder Composition Na: 0
MSK-SFM-DS is a compact disk mill with a steel grinding jar
PbWO4 single crystal
The resistivity of MoSi2 heating elements rises with the increase in temperature (shown in the graph below)
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