SKU:31172393759

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1

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Regular price $54.05 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner

Polycrystal Cr  ( Chromium ) metallic substrate

Full sintered diamond blade: 4" x 0

Purity:  99

This electrode sheet is based on Aluminum foil coated by lithium-cobalt dioxide in double sides and is used as the cathode of Li-Ion battery -- 5 sheets /bag

and the latest version of controller software is installed and the analyzer is calibrated for immediate use

Standard Package

Speed Control for the blower is available at extra cost

Hygroscopicity:  No Cleavage (101)

Purity Material Basis 99% Description White powder Composition Na: 0

MSK-SFM-DS is a compact disk mill with a steel grinding jar

PbWO4 single crystal

The resistivity of MoSi2 heating elements rises with the increase in temperature (shown in the graph below)

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Exchange/Return Notes
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