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SKU:53450568808
Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 50 nm ( 500A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Un doped Resistivity: >1000 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 3 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughnessm, Ra: < 5A(RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer
Size: 10mm x 9
first cycle) Cyclability Note: MTI does not manufacture this product
The electrical insulation is good
This is an one end of sealing flanges made of polyfluortetraethylene (PTFE) for 80 mm diameter processing tube
Pumping of corrosive or explosive media
47 ne = 2
Click for detailed information about the MTS02-Y software kit
Temperature Controller Single point setting temperature controller with +/- 1°C accuracy
This aluminum foil with 12 um thickness is used as substrate (Al current collectors) for coating cathode materials in Li-Ion rechargeable battery research
Lattice constant: Tetragonal a=b=5
DC Sputtering
Power Consumption 2200W Max
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