SKU:49731220591
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 5 15 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" + 0. 5 mm in diameter x 0. 5 mm + 0. 05 mm th Orientation: (111) + 1o
58)E-3 ohm
MTI-DOOR-LC-S
Dimension: 5x5 x 0
Single crystal KTaO3
39)E18cmE-3
Do not reuse the tape
To build a DIY electrospinning system
Plastic Foam Module Wafer Carrier is a solution for valued and fragile devices
203 @ 632
2 Pic
which is compatible for gas flow and temperature measurements
Packing: Vacuum packed on a 4" single wafer carrier box
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