SKU:99061779039
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cmThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As dped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5x5 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related
SSA: ~~ 21m2/g
Roughness (RMS
Density: 5
Due to the nature of the argon atmosphere
For example
mm ( open frame )
Primary Flat: US(01-1)+/-0
D 295mm for MTI's GSL-1100X-11 tube furnace
Modified Bridgman
please keep all packaging materials
Please consider using am electronic motor grinder to save lab cost
Packing: 1000 class clean room in vacuum bag
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