SKU:23150885310
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cmThermal oxide Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 0. 01 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm dia + 0. 5 mm x 0. 5 mm th Orientation: (100) + 0. 5o Polish: one
L=L1+L2:=200+130=330mm
5 mm Material SiC Note If you need a larger quantity for resale
Polish: One or two sides EPI polished by CMP technology with minimum sub-surface damage
Size: 3" diameter x 1
Maximum Load of a single die 5 metric Ton (at room temperature)
1@ RT (cold press + thermal processing)
Size: 10mm x 10mm x 0
00102 cm Flexural Strength 8400 psi 57
Grooved by MSK-500-L
MTI Supplies Nylon-made Splittable Pouch Cell Casing for Battery R&D
Impurity: MgO < 0
Orientation: (100) 4 Deg
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