SKU:30727560408
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, N type, As-doped 1SP, R:0.001-0.005 ohm.cmThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" diameter + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish:
you may make SiC coating on graphite surface using our SiC paste as the related product below
One pressing die sleeve
Growing Method: VGF
Material: Cobalt Foam
Input Impedance
Polish: one side polished
Density: 6 g/cm^3
Growth method and max
Overall Dimensions Case: 123 mm L x 12 mm W x 70mm H (Thickness =0
Trimming Width/Length
Please consider purchasing our ceramic tube block
and stabilized by brakes
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