SKU:20650227004
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cmThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As dped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related
Crystal Structure: cubic a = 6
Two types of battery holders are included in the Standard package:
ID: 70 mm (see photo below)
In addition
please keep in mind that PVDF resin will release toxic hydrogen fluoride and fluorocarbon when it burns
Multi-position adjustable Using as a Vertical furnace Fixing Knobs for Position Adjustment
then output is about 20
8 MPa (Each stroke will consume 0
5 min rest
Orientation: (001)
Packing: in 1000 class clean plastic bag
Clcik below pic to see FLAAT structure
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