SKU:35091519539
LaAlO3, (100) orn.10 x 5 x 1.0mm substrate, 1 side Epi polished - LAOa100510S1
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
LaAlO3, (100) orn.10 x 5 x 1.0mm substrate, 1 side Epi polished - LAOa100510S1Substrate Specifications: Wafer Size: 10 x 5 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5 Deg Polishing: One side CMP polished with free sub surface damage. Surface finish (RMS or Ra) : < 10A Package: Under 1000 class clean room, and in a 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792 Pseudocubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below
please click here for specification details
Active Material Proportion in Powder: 94%
5ml x 32 centrifuge tubes
GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method
Stable structure with much less defects than SrTiO3
Chart saving (
Application: Connect to cathode current collector as polymer battery positive terminal
Atomic Number 13
sample loading length: 6"
please keep the 24V power adaptor outside of glovebox with the KF40 feedthrough
(GaP single crystal wafer
Weight: ~ 47 g per piece
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Exchange/Return Notes
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